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Si broadband (3-12 um) emitting diodes operating at T ≥ 300K

Author(s): Volodymyr Malyutenko, Oleg Malyutenko, Andriy Tykhonov, Remigiusz Grodecki, Tadeusz Piotrowski, Jerzy Pultorak, Maciej Wegrzecki
Affiliation(s): Lashkaryov Institute of Semiconductor Physics, Kiev, Ukraine; Institute of Electron Technology, Warsaw, Poland.

Topic: 5. Optoelectronic Sensor-Technologies and Light Sources
Presentation: Oral

In the recent years, Si-based optoelectronics have been a subject of extensive study. This indirect band gap material is considered as a competitive basis to emitting structures for near-infrared (NIR,  < 2 mkm) band. Si nanocrystals, Si/SiO2 superlattices, porous Si, Si-based matrix doped with erbium, and high-purity float zone Si with textured and passivated surface were developed to suppress non-radiative recombination. However for mid- and long-wave IR (312 m) these approaches do not work. As part of an effort to show that Si is a credible material platform for longer wavelength emitters, we report on the performance of Si photonic emitters operating in the 3-5 and 8-12 m atmospheric transparency windows. The principle of the device is in the modulation of thermal emission beyond the Si fundamental absorption band by controlling the free carrier concentration in the base of a long p-i-n diode. We briefly discuss the operation principle, fabrication technology, and parameters of the planar single emitters (500x500 mkmsq) and emitter bars (which are the arrays of 64 side-by-side emitters integrated into a single chip) operating at 300K